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Dissolvable Metals for Transient Electronics.

Authors :
Yin, Lan
Cheng, Huanyu
Mao, Shimin
Haasch, Richard
Liu, Yuhao
Xie, Xu
Hwang, Suk‐Won
Jain, Harshvardhan
Kang, Seung‐Kyun
Su, Yewang
Li, Rui
Huang, Yonggang
Rogers, John A.
Source :
Advanced Functional Materials; Feb2014, Vol. 24 Issue 5, p645-658, 14p
Publication Year :
2014

Abstract

Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de-ionized (DI) water and simulated body fluids (Hanks' solution pH 5-8) are systematically studied, to assess the potential for use of these metals in water-soluble, that is, physically "transient", electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1616301X
Volume :
24
Issue :
5
Database :
Complementary Index
Journal :
Advanced Functional Materials
Publication Type :
Academic Journal
Accession number :
101074456
Full Text :
https://doi.org/10.1002/adfm.201301847