Back to Search
Start Over
Preparation and characterization of Sn-doped β-GaO homoepitaxial films by MOCVD.
- Source :
- Journal of Materials Science; Apr2015, Vol. 50 Issue 8, p3252-3257, 6p, 6 Graphs
- Publication Year :
- 2015
-
Abstract
- Sn-doped gallium oxide (GaO:Sn) films were deposited on β-GaO (100) substrates by metal organic chemical vapor deposition method. The Sn concentration was varied from 1 to 12 % (atomic ratio). The influences of Sn-doping concentration on structure, raman, and photoelectric properties of the films were investigated in detail. The obtained films were monoclinic β-GaO homoepitaxial films. A decrease of about eight orders of magnitude in the film resistivity could be achieved through Sn doping. The 10 % Sn-doped film exhibited the best electrical properties and the lowest resistivity of about 1.20 × 10 Ω cm, with the hall mobility value of 12.03 cm V sobtained. The average transmittances of the β-GaO: Sn films in the visible and UV wavelength ranges were all over 85 %. The optical band gap of the films with different Sn-doping concentrations could be modulated from 4.16 to 4.69 eV. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222461
- Volume :
- 50
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 101049736
- Full Text :
- https://doi.org/10.1007/s10853-015-8893-4