A Novel Trench-Gated Power MOSFET With Reduced Gate Charge.

MLA

Wang, Ying, et al. “A Novel Trench-Gated Power MOSFET With Reduced Gate Charge.” IEEE Electron Device Letters, vol. 36, no. 2, Feb. 2015, pp. 165–67. EBSCOhost, https://doi.org/10.1109/LED.2014.2382112.

APA

Wang, Y., Liu, Y.-J., Yu, C.-H., & Cao, F. (2015). A Novel Trench-Gated Power MOSFET With Reduced Gate Charge. IEEE Electron Device Letters, 36(2), 165–167. https://doi.org/10.1109/LED.2014.2382112

Chicago

Wang, Ying, Yan-Juan Liu, Cheng-Hao Yu, and Fei Cao. 2015. “A Novel Trench-Gated Power MOSFET With Reduced Gate Charge.” IEEE Electron Device Letters 36 (2): 165–67. doi:10.1109/LED.2014.2382112.