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Functionalized benzothieno[3,2 b]thiophenes (BTTs) for high performance organic thin-film transistors (OTFTs).

Authors :
Youn, Jangdae
Huang, Peng-Yi
Zhang, Shiming
Liu, Chiao-Wei
Vegiraju, Sureshraju
Prabakaran, Kumaresan
Stern, Charlotte
Kim, Choongik
Chen, Ming-Chou
Facchetti, Antonio
Marks, Tobin J.
Source :
Journal of Materials Chemistry C; 2014, Vol. 2 Issue 36, p7599-7607, 9p
Publication Year :
2014

Abstract

New benzothieno[3,2-b]thiophene (BTT) derivatives, end-functionalized with biphenyl (Bp-BTT), naphthalenyl (Np-BTT), and benzothieno[3,2-b]thiophenyl (BBTT; dimer of BTT) moieties, were synthesized and characterized for bottom-gate/top-contact organic thin-film transistors (OTFTs). All three materials exhibit good environmental stability as assessed by thermogravimetric analysis, and no decomposition after extended light exposure, due to their wide band gaps and low-lying HOMOs. The single crystal structures of Bp-BTT and BBTT reveal flat molecular geometries, close π–π stacking, and short sulfur-to-sulfur distances, suggesting an ideal arrangement for charge transport. X-ray diffraction (XRD) measurements verify that the bulk crystal structures are preserved in the polycrystalline thin films. As a consequence, Bp-BTT and BBTT exhibit good OTFT performance, with µ = 0.34 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> (max) and I<subscript>on</subscript>/I<subscript>off</subscript> = (3.3 ± 1.6) × 10<superscript>8</superscript> for Bp-BTT, and µ = 0.12 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> (max) and I<subscript>on</subscript>/I<subscript>off</subscript> = (2.4 ± 0.9) × 10<superscript>7</superscript> for BBTT; whereas Np-BTT gives lower device performance with µ = 0.055 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> (max) and I<subscript>on</subscript>/I<subscript>off</subscript> = (6.7 ± 3.4) × 10<superscript>8</superscript>. In addition, octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) treatment of the SiO<subscript>2</subscript> gate dielectric is found to be effective in enhancing the OTFT performance for all three BTT derivatives, by improving the interfacial semiconductor film morphology and in-plane crystallinity. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20507526
Volume :
2
Issue :
36
Database :
Complementary Index
Journal :
Journal of Materials Chemistry C
Publication Type :
Academic Journal
Accession number :
100391554
Full Text :
https://doi.org/10.1039/c4tc01115e