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Growth and characterization of Cu(In,Ga)Se thin films by nanosecond and femtosecond pulsed laser deposition.
- Source :
- Nanoscale Research Letters; Dec2014, Vol. 9 Issue 1, p1-7, 7p
- Publication Year :
- 2014
-
Abstract
- In this work, CuInGaSe (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, CuSe, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19317573
- Volume :
- 9
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nanoscale Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 100300923
- Full Text :
- https://doi.org/10.1186/1556-276X-9-280