Lead- and alkali-metal-free BaTiO3–Bi(Mg0.5Ti0.5)O3–BiFeO3 solid-solution thin films with high dielectric constant prepared on Si substrates by solution-based method.

Lead- and alkali-metal-free BaTiO₃–Bi(Mg_0.5Ti_0.5)O₃–BiFeO₃ solid-solution thin films were prepared on (111)_cSrRuO₃/(111)Pt/TiO₂/SiO₂/(100)Si substrates by chemical solution deposition (CSD) and their crystal structure and dielectric properties were investigated. The lattice spacing as a function of z/(x + z) in xBaTiO₃–0.1Bi(Mg_0.5Ti_0.5)O₃–zBiFeO₃ indicated the existence of phase boundaries (pseudocubic/rhombohedral) in the range of z/(x + z) = 0.33–0.56, where the relatively high relative dielectric constant, ε_r, of above 800 was obtained. On the other hand, dielectric loss, tan δ, of below 0.2 was confirmed in the range z/(x + z) = 0–0.87, which rapidly increased toward z/(x + z) = 1.0. The relatively high ε_r values of these films deposited on Si substrates by a solution-based process suggest that they can be used as alternative to Pb(Zr,Ti)O₃, KNbO₃, and (Bi_1/2Na_1/2)TiO₃-based films. [ABSTRACT FROM AUTHOR]