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A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires.
- Source :
- Japanese Journal of Applied Physics; Apr2013, Vol. 52 Issue 4S, p1-1, 1p
- Publication Year :
- 2013
-
Abstract
- In this study, we proposed a new methodology for probing the electrical properties of heavily doped polycrystalline silicon (poly-Si) nanowires (NWs), including active doping concentration, mobility, and interface fixed charge density. Implementation of this procedure is based on the modulation of the device operation of a gate-all-around (GAA) junctionless (J-less) transistor from the gated resistor mode to the ungated one. The extracted carrier concentration in the NW is found to be much lower than that of Hall measurements, while a negative fixed charge density is identified with the procedure. Dopant segregation at the oxide interface is postulated to be closely related to these observations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00214922
- Volume :
- 52
- Issue :
- 4S
- Database :
- Complementary Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 100231038
- Full Text :
- https://doi.org/10.7567/JJAP.52.04CC18