Cite
Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes.
MLA
Zheng, Zhiyuan, et al. “Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes.” Japanese Journal of Applied Physics, vol. 51, no. 7R, July 2012, p. 1. EBSCOhost, https://doi.org/10.1143/JJAP.51.072101.
APA
Zheng, Z., Chen, Z., Xian, Y., Fan, B., Huang, S., Jia, W., Wu, Z., Wang, G., & Jiang, H. (2012). Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes. Japanese Journal of Applied Physics, 51(7R), 1. https://doi.org/10.1143/JJAP.51.072101
Chicago
Zheng, Zhiyuan, Zimin Chen, Yulun Xian, Bingfeng Fan, Shanjin Huang, Weiqing Jia, Zhisheng Wu, Gang Wang, and Hao Jiang. 2012. “Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes.” Japanese Journal of Applied Physics 51 (7R): 1. doi:10.1143/JJAP.51.072101.