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Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique.
- Source :
- Applied Physics Express; Jan2014, Vol. 7 Issue 1, p1-1, 1p
- Publication Year :
- 2014
-
Abstract
- In this letter, a normally-off GaN recessed-gate MOSFET is demonstrated using a nonplasma gate recess technique, in which the access region with AlGaN/GaN heterostructure was selectively grown on a semi-insulating GaN/Si template to naturally form a recessed gate. The normally-off recessed-gate Al<subscript>2</subscript>O<subscript>3</subscript>/GaN MOSFET presents a high threshold voltage of 3.5 V and a maximum drain current density of 550 mA/mm (at a positive gate bias of 12 V). A maximum field-effect mobility of 170 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> and a large on/off current ratio of more than 10<superscript>7</superscript> was obtained, which indicates the high quality of the Al<subscript>2</subscript>O<subscript>3</subscript>/GaN interface. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18820778
- Volume :
- 7
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Applied Physics Express
- Publication Type :
- Academic Journal
- Accession number :
- 100194929
- Full Text :
- https://doi.org/10.7567/APEX.7.016502