Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation.

A junctionless (JL) transistor has no pn junctions and has a number of advantages to fabricate ultrashort-channel metal–oxide–semiconductor field-effect transistors. In this paper, we study the electron transport in JL transistors based on a Monte Carlo simulation. We demonstrate that high channel doping will not degrade the drive current seriously, because ionized impurities scatter electrons mostly forward, and thus there is less chance for scattered electrons to return back to the source. We also find that smaller parasitic resistance in the source of a JL transistor also contributes to achieve high drive current. [ABSTRACT FROM AUTHOR]