A 16 nm 128 Mb SRAM in High-\kappa Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.

MLA

Chen, Yen-Huei, et al. “A 16 Nm 128 Mb SRAM in High-\kappa Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.” IEEE Journal of Solid-State Circuits, vol. 50, no. 1, Jan. 2015, pp. 170–77. EBSCOhost, https://doi.org/10.1109/JSSC.2014.2349977.

APA

Chen, Y.-H., Chan, W.-M., Wu, W.-C., Liao, H.-J., Pan, K.-H., Liaw, J.-J., Chung, T.-H., Li, Q., Lin, C.-Y., Chiang, M.-C., Wu, S.-Y., & Chang, J. (2015). A 16 nm 128 Mb SRAM in High-\kappa Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications. IEEE Journal of Solid-State Circuits, 50(1), 170–177. https://doi.org/10.1109/JSSC.2014.2349977

Chicago

Chen, Yen-Huei, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, et al. 2015. “A 16 Nm 128 Mb SRAM in High-\kappa Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.” IEEE Journal of Solid-State Circuits 50 (1): 170–77. doi:10.1109/JSSC.2014.2349977.