Back to Search
Start Over
Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering.
- Source :
- IEEE Transactions on Plasma Science; Dec2014 Part 1, Vol. 42 Issue 12, p3742-3746, 5p
- Publication Year :
- 2014
-
Abstract
- In this paper, high-performance InGaZnO (IGZO) thin-film transistors were fabricated with film-profile-engineering scheme. The impacts of gate dielectric, O2/Ar ratio during the sputtering of the IGZO, and annealing ambient on the device performance were investigated. It is found that the turn-ON voltage of the device is closely related to the gate dielectric material. For the devices with Al2O3 as the gate dielectric, decent performance in terms of high ON/OFF current ratio (> 10^\mathrm \mathbf 8 ), extremely steep subthreshold swing (62 mV/decade), and good mobility (19.8 cm2/V $\cdot $ s) is obtained. The influences of O2/Ar flow ratio are distinct for the devices with Al2O3 gate oxide. Significant improvement in the stability of the devices to the environment is achieved with the anneal done in a low-pressure N2 ambient. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00933813
- Volume :
- 42
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Plasma Science
- Publication Type :
- Academic Journal
- Accession number :
- 100028462
- Full Text :
- https://doi.org/10.1109/TPS.2014.2359992