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Cryogenic in-memory computing using magnetic topological insulators.

Authors :
Liu Y
Lee A
Qian K
Zhang P
Xiao Z
He H
Ren Z
Cheung SK
Liu R
Li Y
Zhang X
Ma Z
Zhao J
Zhao W
Yu G
Wang X
Liu J
Wang Z
Wang KL
Shao Q
Source :
Nature materials [Nat Mater] 2025 Jan 27. Date of Electronic Publication: 2025 Jan 27.
Publication Year :
2025
Publisher :
Ahead of Print

Abstract

Machine learning algorithms have proven to be effective for essential quantum computation tasks such as quantum error correction and quantum control. Efficient hardware implementation of these algorithms at cryogenic temperatures is essential. Here we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a cryogenic in-memory computing scheme based on the coexistence of a chiral edge state and a topological surface state. The memristive switching and reading of the giant anomalous Hall effect exhibit high energy efficiency, high stability and low stochasticity. We achieve high accuracy in a proof-of-concept classification task using four magnetic topological memristors. Furthermore, our algorithm-level and circuit-level simulations of large-scale neural networks demonstrate software-level accuracy and lower energy consumption for image recognition and quantum state preparation compared with existing magnetic memristor and complementary metal-oxide-semiconductor technologies. Our results not only showcase a new application of chiral edge states but also may inspire further topological quantum-physics-based novel computing schemes.<br />Competing Interests: Competing interests: The authors declare no competing interests.<br /> (© 2025. The Author(s), under exclusive licence to Springer Nature Limited.)

Details

Language :
English
ISSN :
1476-4660
Database :
MEDLINE
Journal :
Nature materials
Publication Type :
Academic Journal
Accession number :
39870991
Full Text :
https://doi.org/10.1038/s41563-024-02088-4