Cite
Interfacial Electronic Charge Trapping and Photonic Carrier Excitation Coupling in Solution-Processed Zinc-Tin Oxide Thin-Film Transistors Applied for Logic Gate Design and Quantized Neural Network.
MLA
Chang, Pei-Hsuan, et al. “Interfacial Electronic Charge Trapping and Photonic Carrier Excitation Coupling in Solution-Processed Zinc-Tin Oxide Thin-Film Transistors Applied for Logic Gate Design and Quantized Neural Network.” ACS Applied Materials & Interfaces, vol. 17, no. 1, Jan. 2025, pp. 1477–84. EBSCOhost, https://doi.org/10.1021/acsami.4c15102.
APA
Chang, P.-H., Lin, W.-Y., Huang, Y.-C., Chen, Y.-C., Shih, L.-C., & Chen, J.-S. (2025). Interfacial Electronic Charge Trapping and Photonic Carrier Excitation Coupling in Solution-Processed Zinc-Tin Oxide Thin-Film Transistors Applied for Logic Gate Design and Quantized Neural Network. ACS Applied Materials & Interfaces, 17(1), 1477–1484. https://doi.org/10.1021/acsami.4c15102
Chicago
Chang, Pei-Hsuan, Wun-Yun Lin, Ya-Chi Huang, Yu-Chieh Chen, Li-Chung Shih, and Jen-Sue Chen. 2025. “Interfacial Electronic Charge Trapping and Photonic Carrier Excitation Coupling in Solution-Processed Zinc-Tin Oxide Thin-Film Transistors Applied for Logic Gate Design and Quantized Neural Network.” ACS Applied Materials & Interfaces 17 (1): 1477–84. doi:10.1021/acsami.4c15102.