Cite
Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors.
MLA
Tang, Yue, et al. “Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors.” Advanced Materials (Deerfield Beach, Fla.), vol. 37, no. 5, Feb. 2025, p. e2405358. EBSCOhost, https://doi.org/10.1002/adma.202405358.
APA
Tang, Y., Ping, Y., Yang, X., Xing, J., Chen, J., Wang, X., Lu, J., Jing, H., Liu, K., Wu, J., Zhou, X., Zhai, T., & Xu, H. (2025). Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors. Advanced Materials (Deerfield Beach, Fla.), 37(5), e2405358. https://doi.org/10.1002/adma.202405358
Chicago
Tang, Yue, Yue Ping, Xiaoxin Yang, Jiabao Xing, Jiabiao Chen, Xiao Wang, Jiangbo Lu, et al. 2025. “Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors.” Advanced Materials (Deerfield Beach, Fla.) 37 (5): e2405358. doi:10.1002/adma.202405358.