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Overcoming the Open-Circuit Voltage Losses in Narrow Bandgap Perovskites for All-Perovskite Tandem Solar Cells.
- Source :
-
ACS materials letters [ACS Mater Lett] 2024 Oct 23; Vol. 6 (11), pp. 5190-5198. Date of Electronic Publication: 2024 Oct 23 (Print Publication: 2024). - Publication Year :
- 2024
-
Abstract
- Narrow-bandgap (NBG) perovskite solar cells based on tin-lead mixed perovskite absorbers suffer from significant open-circuit voltage ( V <subscript>OC</subscript> ) losses due primarily to a high defect density and charge carrier recombination at the device interfaces. In this study, the V <subscript>OC</subscript> losses in NBG perovskite single junction cells ( E <subscript>g</subscript> = 1.21 eV) are addressed. The optimized NBG subcell is then used to fabricate highly efficient all-perovskite tandem solar cells (TSCs). The improvement in the V <subscript>OC</subscript> is achieved via the addition of a thin poly(triarylamine) interlayer between the poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)-based hole transport layer (HTL) and the NBG perovskite. The optimal bilayer HTL results in a champion power conversion efficiency (PCE) of 20.3%, compared to 17.8% of the PEDOT:PSS-based control device. The V <subscript>OC</subscript> improvement of the single-junction NBG cell is also successfully transferred to all-perovskite TSC, resulting in a high V <subscript>OC</subscript> of 2.00 V and a PCE of 25.1%.<br />Competing Interests: The authors declare no competing financial interest.<br /> (© 2024 The Authors. Published by American Chemical Society.)
Details
- Language :
- English
- ISSN :
- 2639-4979
- Volume :
- 6
- Issue :
- 11
- Database :
- MEDLINE
- Journal :
- ACS materials letters
- Publication Type :
- Academic Journal
- Accession number :
- 39512723
- Full Text :
- https://doi.org/10.1021/acsmaterialslett.4c01699