Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors.

MLA

Ma, Zinan, et al. “Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors.” Nano Letters, vol. 24, no. 44, Nov. 2024, pp. 14058–65. EBSCOhost, https://doi.org/10.1021/acs.nanolett.4c04034.

APA

Ma, Z., Yuan, P., Li, L., Tang, X., Li, X., Zhang, S., Yu, L., Jiang, Y., Song, X., & Xia, C. (2024). Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors. Nano Letters, 24(44), 14058–14065. https://doi.org/10.1021/acs.nanolett.4c04034

Chicago

Ma, Zinan, Peize Yuan, Lin Li, Xiaojie Tang, Xueping Li, Suicai Zhang, Leiming Yu, Yurong Jiang, Xiaohui Song, and Congxin Xia. 2024. “Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors.” Nano Letters 24 (44): 14058–65. doi:10.1021/acs.nanolett.4c04034.