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Coulomb Contribution to Shockley-Read-Hall Recombination.

Authors :
Sakowski K
Strak P
Kempisty P
Piechota J
Grzegory I
Perlin P
Monroy E
Kaminska A
Krukowski S
Source :
Materials (Basel, Switzerland) [Materials (Basel)] 2024 Sep 18; Vol. 17 (18). Date of Electronic Publication: 2024 Sep 18.
Publication Year :
2024

Abstract

A nonradiative recombination channel is proposed, which does not vanish at low temperatures. Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination, is reformulated to accommodate Coulomb attraction between the charged deep defect and the approaching free carrier. It is demonstrated that this effect may cause a considerable increase in the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that, in a typical semiconductor device or semiconductor medium, the SRH recombination rate at low temperatures is much higher and cannot be neglected. This effect renders invalid the standard procedure of estimating the radiative recombination rate by measuring the light output in cryogenic temperatures, as a significant nonradiative recombination channel is still present. We also show that SRH is more effective in the case of low-doped semiconductors, as effective screening by mobile carrier density could reduce the effect.

Details

Language :
English
ISSN :
1996-1944
Volume :
17
Issue :
18
Database :
MEDLINE
Journal :
Materials (Basel, Switzerland)
Publication Type :
Academic Journal
Accession number :
39336324
Full Text :
https://doi.org/10.3390/ma17184581