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Mechanochemistry-mediated colloidal liquid metals for electronic device cooling at kilowatt levels.
- Source :
-
Nature nanotechnology [Nat Nanotechnol] 2025 Jan; Vol. 20 (1), pp. 104-111. Date of Electronic Publication: 2024 Sep 26. - Publication Year :
- 2025
-
Abstract
- Electronic systems and devices operating at significant power levels demand sophisticated solutions for heat dissipation. Although materials with high thermal conductivity hold promise for exceptional thermal transport across nano- and microscale interfaces under ideal conditions, their performance often falls short by several orders of magnitude in the complex thermal interfaces typical of real-world applications. This study introduces mechanochemistry-mediated colloidal liquid metals composed of Galinstan and aluminium nitride to bridge the practice-theory disparity. These colloids demonstrate thermal resistances of between 0.42 and 0.86 mm <superscript>2</superscript> K W <superscript>-1</superscript> within actual thermal interfaces, outperforming leading thermal conductors by over an order of magnitude. This superior performance is attributed to the gradient heterointerface with efficient thermal transport across liquid-solid interfaces and the notable colloidal thixotropy. In practical devices, experimental results demonstrate their capacity to extract 2,760 W of heat from a 16 cm <superscript>2</superscript> thermal source when coupled with microchannel cooling, and can facilitate a 65% reduction in pump electricity consumption. This advancement in thermal interface technology offers a promising solution for efficient and sustainable cooling of devices operating at kilowatt levels.<br />Competing Interests: Competing interests: The authors declare no competing interests.<br /> (© 2024. The Author(s), under exclusive licence to Springer Nature Limited.)
Details
- Language :
- English
- ISSN :
- 1748-3395
- Volume :
- 20
- Issue :
- 1
- Database :
- MEDLINE
- Journal :
- Nature nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 39327511
- Full Text :
- https://doi.org/10.1038/s41565-024-01793-0