Novel halogenated cyclopentadienyl hafnium precursor for atomic layer deposition of high-performance HfO 2 thin film.

High dielectric constant (high- k ) materials play a crucial role in modern electronics, particularly in semiconductor applications such as transistor gate insulators and dielectrics in metal-insulator-metal (MIM) capacitors. However, achieving optimal crystallinity and suppressing interfacial layer formation during deposition processes remain key challenges. To address these challenges, this study introduces a novel approach using atomic layer deposition (ALD) with a new Hf precursor incorporating an iodo ligand. The synthesized precursor, IHf, demonstrates enhanced thermal stability and reactivity, leading to superior film properties. ALD deposition of HfO ₂ thin films using IHf yields excellent crystallinity and effectively inhibits interfacial layer formation, resulting in enhanced capacitance density and improved leakage current characteristics in MIM capacitors. Notably, IHf-deposited HfO ₂ films exhibit a significant reduction in leakage current, achieving an equivalent oxide thickness of 1.73 nm at a leakage current density of 7.02 × 10 ^-8 A cm ^-2 @ +0.8 V. These findings highlight the potential of IHf as a promising precursor for high-performance electronic device fabrication, paving the way for advancements in semiconductor technology.
Competing Interests: There are no conflicts to declare.
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