Lanthanide-Like Contraction Enables the Fabrication of High-Purity Selenium Films for Efficient Indoor Photovoltaics.

The lanthanide contraction involves a reduction in atomic radius among f-block elements below the expected level. A similar contraction is observed in group-16 elements. The atomic radius of Se (117 pm) is slightly larger than that of S (104 pm) arising from the presence of d electrons, compared to the significant increase in atomic radius from O (73 pm) to S. This lanthanide-like contraction contributes to Se's robust oxidative resistance. Here we report a selective oxidation strategy utilizing Se's strong antioxidative property to remove coexisting narrow-band gap Te impurities from Se feedstocks. This strategy selectively oxidizes volatile Te impurities into involatile TeO ₂ that remains in the evaporation source, while only volatile Se deposits onto the substrate during the thermal-evaporation deposition process. This enables the fabrication of high-purity Se films possessing a wide band gap of 1.88 eV, ideally suited to the optimal band gap for indoor photovoltaics (IPVs). The resulting Se photovoltaics exhibit an efficiency of 20.1 % under 1000-lux indoor illumination, outperforming market-dominant amorphous silicon and all types of lead-free perovskite IPVs. Unencapsulated Se devices show no efficiency degradation after 20,000 hours of storage in ambient atmosphere.
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