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A novel method for the synthesis of MoSSe using an (Et 4 N) 2 [Mo 3 S 4 Se 3 Br 6 ] complex as the sole precursor.
- Source :
-
Dalton transactions (Cambridge, England : 2003) [Dalton Trans] 2024 Sep 06. Date of Electronic Publication: 2024 Sep 06. - Publication Year :
- 2024
- Publisher :
- Ahead of Print
-
Abstract
- MoSSe is a semiconducting material with a layered structure similar to MoS <subscript>2</subscript> and MoSe <subscript>2</subscript> , which shows potential applications in optoelectronics, solar cells, sensing, and catalysis. Synthesis of this material with a controllable structure and chemical composition represents a great challenge. Herein, we report a new method for the synthesis of MoSSe by employing an [Et <subscript>4</subscript> N] <subscript>2</subscript> [Mo <subscript>3</subscript> S <subscript>4</subscript> Se <subscript>3</subscript> Br <subscript>6</subscript> ] complex as the sole precursor. Thermal annealing of this complex under an Ar atmosphere at moderate temperatures ranging from 350 °C to 650 °C resulted in the formation of pure MoSSe. The morphology and structure of MoSSe were characterized using SEM, HRTEM, XRD, Raman spectroscopy, X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). The effects of annealing temperature on the structure of MoSSe were also examined.
Details
- Language :
- English
- ISSN :
- 1477-9234
- Database :
- MEDLINE
- Journal :
- Dalton transactions (Cambridge, England : 2003)
- Publication Type :
- Academic Journal
- Accession number :
- 39238328
- Full Text :
- https://doi.org/10.1039/d4dt02016b