Anisotropic magnetoresistance in altermagnetic MnTe.

Authors :: Gonzalez Betancourt RD
Zubáč J
Geishendorf K
Ritzinger P
Růžičková B
Kotte T
Železný J
Olejník K
Springholz G
Büchner B
Thomas A
Výborný K
Jungwirth T
Reichlová H
Kriegner D
Source :: Npj spintronics [Npj Spintron] 2024; Vol. 2 (1), pp. 45. Date of Electronic Publication: 2024 Aug 13.
Publication Year :: 2024
Abstract: Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. Altermagnetism is manifested as a three-fold component in the transverse magnetoresistance which arises due to the anomalous Hall effect.<br />Competing Interests: Competing interestsThe authors declare no competing interests.<br /> (© The Author(s) 2024.)