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Orientation optimization for high performance Mg 3 Sb 2 thermoelectric films via thermal evaporation.

Authors :
Zhang Y
Li B
Han Z
Feng T
Liu Z
Wu X
Wang Q
Zhu K
Hou P
Liu W
Source :
Nanotechnology [Nanotechnology] 2024 Aug 23; Vol. 35 (45). Date of Electronic Publication: 2024 Aug 23.
Publication Year :
2024

Abstract

Low-cost, highly efficient thermoelectric thin-film materials are becoming increasingly popular as miniaturization progresses. Mg <subscript>3</subscript> Sb <subscript>2</subscript> has great potential due to its low cost and high performance. However, the fabrication of Mg <subscript>3</subscript> Sb <subscript>2</subscript> thin films with high power factors (PFs) poses a certain challenge. In this work, we propose a general approach to prepare Mg <subscript>3</subscript> Sb <subscript>2</subscript> thin films with excellent thermoelectric properties. Using a two-step thermal evaporation and rapid annealing process, (001)-oriented Mg <subscript>3</subscript> Sb <subscript>2</subscript> thin films are fabricated on c -plane-oriented Al <subscript>2</subscript> O <subscript>3</subscript> substrates. The structure of the film orientation is optimized by controlling the film thickness, which modulates the thermoelectric performance. The PF of the Mg <subscript>3</subscript> Sb <subscript>2</subscript> at 500 nm (14 μ W·m <superscript>-1</superscript> ·K <superscript>-2</superscript> ) would increase to 169 μ W·m <superscript>-1</superscript> ·K <superscript>-2</superscript> with Ag doping (Mg <subscript>3</subscript> Ag <subscript>0.02</subscript> Sb <subscript>2</subscript> ) at room temperature. This work provides a new strategy for the development of high-performance thermoelectric thin films at room temperature.<br /> (© 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.)

Details

Language :
English
ISSN :
1361-6528
Volume :
35
Issue :
45
Database :
MEDLINE
Journal :
Nanotechnology
Publication Type :
Academic Journal
Accession number :
39137792
Full Text :
https://doi.org/10.1088/1361-6528/ad6e89