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Stereointerface Structure Drives Ferroelectricity in BaZrO 3 Films.
- Source :
-
Inorganic chemistry [Inorg Chem] 2024 Aug 12; Vol. 63 (32), pp. 15098-15104. Date of Electronic Publication: 2024 Jul 29. - Publication Year :
- 2024
-
Abstract
- Interfacial strain engineering can induce structural transformation and introduce new physical properties into materials, which is an effective method to prepare new multifunctional materials. However, interfacial strain has a limited spatial impact size. For example, in 2D thin films, the critical thickness of biaxial strain is typically less than 20 nm, which is not conducive to the maintenance of a strained structure and properties in thick film materials. The construction of a 3D interface can solve this problem. The large lattice mismatch between the BaZrO <subscript>3</subscript> thin film and the substrate can induce the out-of-phase boundary (OPB) structure, which can extend along the thickness direction with the stacking of atoms. The lattice distortion at the OPB structure can provide a clamping effect for each layer of atoms, thus expanding the spatial influence range of biaxial strain. As a result, the uniform in-plane strain distribution and strain-induced ferroelectricity ( P <subscript>r</subscript> = 13 μC/cm <superscript>2</superscript> ) are maintained along the thickness direction in BaZrO <subscript>3</subscript> films.
Details
- Language :
- English
- ISSN :
- 1520-510X
- Volume :
- 63
- Issue :
- 32
- Database :
- MEDLINE
- Journal :
- Inorganic chemistry
- Publication Type :
- Academic Journal
- Accession number :
- 39072372
- Full Text :
- https://doi.org/10.1021/acs.inorgchem.4c02145