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Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS 3 /Fe 3 GeTe 2 van der Waals Heterostructures.

Authors :
Puthirath Balan A
Kumar A
Reiser P
Vimal Vas J
Denneulin T
Lee KD
Saunderson TG
Tschudin M
Pellet-Mary C
Dutta D
Schrader C
Scholz T
Geuchies J
Fu S
Wang H
Bonanni A
Lotsch BV
Nowak U
Jakob G
Gayles J
Kovacs A
Dunin-Borkowski RE
Maletinsky P
Kläui M
Source :
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Aug; Vol. 36 (35), pp. e2403685. Date of Electronic Publication: 2024 Jul 12.
Publication Year :
2024

Abstract

The exchange bias phenomenon, inherent in exchange-coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structures, offer an ideal platform for exploring exchange bias. However, effectively manipulating exchange bias in van der Waals heterostructures remains challenging. This study investigates the origin of exchange bias in MnPS <subscript>3</subscript> /Fe <subscript>3</subscript> GeTe <subscript>2</subscript> van der Waals heterostructures, demonstrating a method to modulate nearly 1000% variation in magnitude through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS <subscript>3</subscript> , a substantial 170 mT exchange bias is observed at 5 K, one of the largest observed in van der Waals heterostructures. This significant exchange bias is linked to anomalous weak ferromagnetic ordering in MnPS <subscript>3</subscript> below 40 K. The tunability of exchange bias during thermal cycling is attributed to the amorphization and changes in the van der Waals gap during field cooling. The findings highlight a robust and adjustable exchange bias in van der Waals heterostructures, presenting a straightforward method to enhance other interface-related spintronic phenomena for practical applications. Detailed interface analysis reveals atom migration between layers, forming amorphous regions on either side of the van der Waals gap, emphasizing the importance of precise interface characterization in these heterostructures.<br /> (© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)

Details

Language :
English
ISSN :
1521-4095
Volume :
36
Issue :
35
Database :
MEDLINE
Journal :
Advanced materials (Deerfield Beach, Fla.)
Publication Type :
Academic Journal
Accession number :
38994679
Full Text :
https://doi.org/10.1002/adma.202403685