III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition.

MLA

Wong, Matthew S., et al. “III-Nitride m-Plane Violet Narrow Ridge Edge-Emitting Laser Diodes with Sidewall Passivation Using Atomic Layer Deposition.” Optics Express, vol. 32, no. 12, June 2024, pp. 20483–90. EBSCOhost, https://doi.org/10.1364/OE.520339.

APA

Wong, M. S., Trageser, E. S., Zhang, H., Chang, H.-M., Gee, S., Tak, T., Gandrothula, S., Lee, C., Speck, J. S., Nakamura, S., Cohen, D. A., & DenBaars, S. P. (2024). III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition. Optics Express, 32(12), 20483–20490. https://doi.org/10.1364/OE.520339

Chicago

Wong, Matthew S, Emily S Trageser, Haojun Zhang, Hsun-Ming Chang, Stephen Gee, Tanay Tak, Srinivas Gandrothula, et al. 2024. “III-Nitride m-Plane Violet Narrow Ridge Edge-Emitting Laser Diodes with Sidewall Passivation Using Atomic Layer Deposition.” Optics Express 32 (12): 20483–90. doi:10.1364/OE.520339.