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Evidence for electron-hole crystals in a Mott insulator.

Authors :
Qiu Z
Han Y
Noori K
Chen Z
Kashchenko M
Lin L
Olsen T
Li J
Fang H
Lyu P
Telychko M
Gu X
Adam S
Quek SY
Rodin A
Castro Neto AH
Novoselov KS
Lu J
Source :
Nature materials [Nat Mater] 2024 Aug; Vol. 23 (8), pp. 1055-1062. Date of Electronic Publication: 2024 Jun 03.
Publication Year :
2024

Abstract

The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, α-RuCl <subscript>3</subscript> , through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.<br /> (© 2024. The Author(s), under exclusive licence to Springer Nature Limited.)

Details

Language :
English
ISSN :
1476-4660
Volume :
23
Issue :
8
Database :
MEDLINE
Journal :
Nature materials
Publication Type :
Academic Journal
Accession number :
38831130
Full Text :
https://doi.org/10.1038/s41563-024-01910-3