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Implementation of Bayesian networks and Bayesian inference using a Cu 0.1 Te 0.9 /HfO 2 /Pt threshold switching memristor.

Authors :
Baek IK
Lee SH
Jang YH
Park H
Kim J
Cheong S
Shim SK
Han J
Han JK
Jeon GS
Shin DH
Woo KS
Hwang CS
Source :
Nanoscale advances [Nanoscale Adv] 2024 Apr 05; Vol. 6 (11), pp. 2892-2902. Date of Electronic Publication: 2024 Apr 05 (Print Publication: 2024).
Publication Year :
2024

Abstract

Bayesian networks and Bayesian inference, which forecast uncertain causal relationships within a stochastic framework, are used in various artificial intelligence applications. However, implementing hardware circuits for the Bayesian inference has shortcomings regarding device performance and circuit complexity. This work proposed a Bayesian network and inference circuit using a Cu <subscript>0.1</subscript> Te <subscript>0.9</subscript> /HfO <subscript>2</subscript> /Pt volatile memristor, a probabilistic bit neuron that can control the probability of being 'true' or 'false.' Nodal probabilities within the network are feasibly sampled with low errors, even with the device's cycle-to-cycle variations. Furthermore, Bayesian inference of all conditional probabilities within the network is implemented with low power (<186 nW) and energy consumption (441.4 fJ), and a normalized mean squared error of ∼7.5 × 10 <superscript>-4</superscript> through division feedback logic with a variational learning rate to suppress the inherent variation of the memristor. The suggested memristor-based Bayesian network shows the potential to replace the conventional complementary metal oxide semiconductor-based Bayesian estimation method with power efficiency using a stochastic computing method.<br />Competing Interests: The authors declare they have no conflict of interest.<br /> (This journal is © The Royal Society of Chemistry.)

Details

Language :
English
ISSN :
2516-0230
Volume :
6
Issue :
11
Database :
MEDLINE
Journal :
Nanoscale advances
Publication Type :
Academic Journal
Accession number :
38817425
Full Text :
https://doi.org/10.1039/d3na01166f