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Thermoelectric Limitations of Graphene Nanodevices at Ultrahigh Current Densities.

Authors :
Evangeli C
Swett J
Spiece J
McCann E
Fried J
Harzheim A
Lupini AR
Briggs GAD
Gehring P
Jesse S
Kolosov OV
Mol JA
Dyck O
Source :
ACS nano [ACS Nano] 2024 Apr 30; Vol. 18 (17), pp. 11153-11164. Date of Electronic Publication: 2024 Apr 19.
Publication Year :
2024

Abstract

Graphene is atomically thin, possesses excellent thermal conductivity, and is able to withstand high current densities, making it attractive for many nanoscale applications such as field-effect transistors, interconnects, and thermal management layers. Enabling integration of graphene into such devices requires nanostructuring, which can have a drastic impact on the self-heating properties, in particular at high current densities. Here, we use a combination of scanning thermal microscopy, finite element thermal analysis, and operando scanning transmission electron microscopy techniques to observe prototype graphene devices in operation and gain a deeper understanding of the role of geometry and interfaces during high current density operation. We find that Peltier effects significantly influence the operational limit due to local electrical and thermal interfacial effects, causing asymmetric temperature distribution in the device. Thus, our results indicate that a proper understanding and design of graphene devices must include consideration of the surrounding materials, interfaces, and geometry. Leveraging these aspects provides opportunities for engineered extreme operation devices.

Details

Language :
English
ISSN :
1936-086X
Volume :
18
Issue :
17
Database :
MEDLINE
Journal :
ACS nano
Publication Type :
Academic Journal
Accession number :
38641345
Full Text :
https://doi.org/10.1021/acsnano.3c12930