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Phase Change Heterostructure Memory with Oxygen-Doped Sb 2 Te 3 Layers for Improved Durability and Reliability through Nano crystalline Island Formation.

Authors :
Kim DH
Park SW
Choi JY
Lee HJ
Oh JS
Joo JM
Kim TG
Source :
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Aug; Vol. 20 (34), pp. e2312249. Date of Electronic Publication: 2024 Apr 15.
Publication Year :
2024

Abstract

Phase-change random access memory represents a notable advancement in nonvolatile memory technology; however, it faces challenges in terms of thermal stability and reliability, hindering its broader application. To mitigate these issues, doping and structural modification techniques such as phase-change heterostructures (PCH) are widely studied. Although doping typically enhances thermal stability, it can adversely affect the switching speed. Structural modifications such as PCH have struggled to sustain stable performance under high atmospheric conditions. In this study, these challenges are addressed by synergizing oxygen-doped Sb <subscript>2</subscript> Te <subscript>3</subscript> (OST) with PCH technology. This study presents a novel approach in which OST significantly improves the crystallization temperature, power efficiency, and cyclability. Subsequently, the integration of the PCH technology bolsters the switching speed and further amplifies the device's reliability and endurance by refining the grain size (≈7 nm). The resultant OST-PCH devices exhibit exceptional performance metrics, including a drift coefficient of 0.003 in the RESET state, endurance of ≈4 × 10 <superscript>8</superscript> cycles, an switching speed of 300 ns, and 67.6 pJ of RESET energy. These findings suggest that the OST-PCH devices show promise for integration into embedded systems, such as those found in automotive applications and Internet of Things devices.<br /> (© 2024 Wiley‐VCH GmbH.)

Details

Language :
English
ISSN :
1613-6829
Volume :
20
Issue :
34
Database :
MEDLINE
Journal :
Small (Weinheim an der Bergstrasse, Germany)
Publication Type :
Academic Journal
Accession number :
38618929
Full Text :
https://doi.org/10.1002/smll.202312249