Back to Search Start Over

Asymmetric metamaterial sandwich structure with NIM characteristics for THz imaging application.

Authors :
Ramachandran T
Faruque MRI
Al-Mugren KS
Source :
Scientific reports [Sci Rep] 2024 Mar 15; Vol. 14 (1), pp. 6258. Date of Electronic Publication: 2024 Mar 15.
Publication Year :
2024

Abstract

This study presented a unique, miniaturised asymmetric interconnected vertical stripe (IVS) design for terahertz (THz) frequency applications. Therefore, this research aimed to achieve a frequency response of 0 to 10 THz using a 5 × 5 µm <superscript>2</superscript> Silicon (Si) substrate material. Meanwhile, various parametric examinations were conducted to investigate variations in the performance. For example, the unit cell selection process was carefully examined by using various design structures and modifying the structure by adding split gaps and connecting bars between vertical stripes. Furthermore, the proposed sandwich structure design was used to compute the absorbance and reflectance properties. All the analytical examinations were executed utilising the Computer Simulation Technology (CST) 2019 software. The introduced IVS metamaterial exhibits negative index behaviour and has a single resonance frequency of 5.23 THz with an acceptable magnitude of - 24.38 dB. Additionally, the quadruple-layer IVS structure exhibits optimised transmission coefficient behaviour between 3 and 6 THz and 7 to 9 THz, respectively. However, the magnitude of the transmission coefficient increased with the number of material layers. Besides that, the absorbance study shows that using a quadruple-layer structure obtains unique and promising results. Overall, the proposed asymmetric IVS metamaterial design achieves the required performance by using a compact structure rather than extending the dimensions of the design.<br /> (© 2024. The Author(s).)

Details

Language :
English
ISSN :
2045-2322
Volume :
14
Issue :
1
Database :
MEDLINE
Journal :
Scientific reports
Publication Type :
Academic Journal
Accession number :
38491125
Full Text :
https://doi.org/10.1038/s41598-024-56723-w