Coexistence of Quantum-Spin-Hall and Quantum-Hall-Topological-Insulating States in Graphene/hBN on SrTiO 3 Substrate.

SrTiO ₃ (STO) substrate, a perovskite oxide material known for its high dielectric constant (ɛ), facilitates the observation of various (high-temperature) quantum phenomena. A quantum Hall topological insulating (QHTI) state, comprising two copies of QH states with antiparallel two ferromagnetic edge-spin overlap protected by the U(1) axial rotation symmetry of spin polarization, has recently been achieved in low magnetic field (B) even as high as ≈100 K in a monolayer graphene/thin hexagonal boron nitride (hBN) spacer placed on an STO substrate, thanks to the high ɛ of STO. Despite the use of the heavy STO substrate, however, proximity-induced quantum spin Hall (QSH) states in 2D TI phases, featuring a topologically protected helical edge spin phase within time-reversal-symmetry, is not confirmed. Here, with the use of a monolayer hBN spacer, it is revealed the coexistence of QSH (at B = 0T) and QHTI (at B ≠ 0) states in the same single graphene sample placed on an STO, with a crossover regime between the two at low B. It is also classified that the different symmetries of the two nontrivial helical edge spin phases in the two states lead to different interaction with electron-puddle quantum dots, caused by a local surface pocket of the STO, in the crossover regime, resulting in a spin dephasing only for the QHTI state. The results obtained using STO substrates open the doors to investigations of novel QH spin states with different symmetries and their correlations with quantum phenomena. This exploration holds value for potential applications in spintronic devices.
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