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Polarization-Dependent Memory and Erasure in Quantum Dots/Graphene Synaptic Devices.

Authors :
Lee KJ
Kim JH
Jeon S
Shin CW
Kim HR
Park HG
Kim J
Source :
Nano letters [Nano Lett] 2024 Feb 21; Vol. 24 (7), pp. 2421-2427. Date of Electronic Publication: 2024 Feb 06.
Publication Year :
2024

Abstract

We demonstrate excitatory and inhibitory properties in a single heterostructure consisting of two quantum dots/graphene synaptic elements using linearly polarized monochromatic light. Perovskite quantum dots and PbS quantum dots were used to increase and decrease photocurrent weights, respectively. The polarization-dependent photocurrent was realized by adding a polarizer in the middle of the PbS quantum dots/graphene and perovskite quantum dots/graphene elements. When linearly polarized light passed through the polarizer, both the lower excitatory and upper inhibitory devices were activated, with the lower device with the stronger response dominating to increase the current weight. In contrast, the polarized light was blocked by the polarizer, and the above device was only operated, reducing the current weight. Furthermore, two orthogonal polarizations of light were used to perform the sequential processes of potentiation and habituation. By adjustment of the polarization angle of light, not only the direction of the current weight but also its level was altered.

Details

Language :
English
ISSN :
1530-6992
Volume :
24
Issue :
7
Database :
MEDLINE
Journal :
Nano letters
Publication Type :
Academic Journal
Accession number :
38319957
Full Text :
https://doi.org/10.1021/acs.nanolett.4c00124