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Towards large scale integration of MoS 2 /graphene heterostructure with ALD-grown MoS 2 .

Authors :
Hyot B
Ligaud C
Yoo TJ
David-Vifflantzeff J
Gauthier N
Cadot S
Le VH
Brunet P
Le Van-Jodin L
Source :
Nanotechnology [Nanotechnology] 2024 Feb 01; Vol. 35 (16). Date of Electronic Publication: 2024 Feb 01.
Publication Year :
2024

Abstract

In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves leveraging the combination of light-sensitive two-dimensional (2D) semiconducting transition-metal dichalcogenides, such as MoS <subscript>2</subscript> and the high electrical conductivity of graphene. Over the past decade, exfoliated 2D materials and electron-beam lithography have been used extensively to demonstrate feasibility on single devices. But for these devices to be used in the real-world systems, it is necessary to demonstrate good device performance similar to lab-based devices with repeatability of the results from device to device and a path to large scale manufacturing. To work in this way, a fabrication process of MoS <subscript>2</subscript> /graphene vertical heterostructures with a wafer-scale integration in a CMOS compatible foundry environment is evaluated here. Large-scale atomic layer deposition on 8 inch silicon wafers is used for the growth of MoS <subscript>2</subscript> layers which are then transferred on a 4 inch graphene-based wafer. The MoS <subscript>2</subscript> /graphene phototransistors are fabricated collectively, achieving a minimum channel length of 10 μ m. The results measured on dozen of devices demonstrate a photoresponsivity of 50 A W <superscript>-1</superscript> and a remarkable sensitivity as low as 10 nW at 660 nm. These results not only compete with lab-based photodetectors made of chemical vapor deposition grown MoS <subscript>2</subscript> layers transferred on graphene, but also pave the way for the large-scale integration of these emerging 2D heterostructures in optoelectronic devices and sensors.<br /> (© 2024 IOP Publishing Ltd.)

Details

Language :
English
ISSN :
1361-6528
Volume :
35
Issue :
16
Database :
MEDLINE
Journal :
Nanotechnology
Publication Type :
Academic Journal
Accession number :
38211319
Full Text :
https://doi.org/10.1088/1361-6528/ad1d7c