Extremely Low Contact Resistivity of Bi 2 Te 3 -Based Modules Enabled by NiP-Based Alloy Barrier.

Electrode diffusion barrier plays an important role in thermoelectric cooling devices. Compared with p-type Bi _0.5 Sb _1.5 Te ₃ , the compatibility between commercial Ni barrier and n-type Bi ₂ Te _2.7 Se _0.3 is a key bottleneck to enhance the performance of Bi ₂ Te ₃ -based cooling devices. This paper proposed a NiP alloy barrier to improve the compatibility with n-type Bi ₂ Te _2.7 Se _0.3 , and systemically investigated the contact and interfacial dynamics properties. Due to the low diffusion rate of NiP alloy, the initial interfacial contact resistivity of Bi ₂ Te _2.7 Se _0.3 /NiP is as low as 0.90 μΩ cm ² , and it further can be depressed below 1.98 μΩ cm ² even after aging at 423 K for 35 days, indicating the superior thermal stability of the NiP barrier layer compared to the commercial Ni barrier layer. Based on the NiP barrier, a 15-pair bismuth telluride device is prepared and a high cooling temperature difference of 71.5 K at a hot-side temperature of 304 K is achieved, which proves the practical applications potential of NiP barrier for Bi ₂ Te ₃ -based modules.