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Dramatically Enhanced Valley-Polarized Emission by Alloying and Electrical Tuning of Monolayer WTe 2 x S 2(1- x ) Alloys at Room Temperature with 1T'-WTe 2 -Contact.

Authors :
Lin WH
Li CS
Wu CI
Rossman GR
Atwater HA
Yeh NC
Source :
Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Jan; Vol. 11 (2), pp. e2304890. Date of Electronic Publication: 2023 Nov 16.
Publication Year :
2024

Abstract

Monolayer ternary tellurides based on alloying different transition metal dichalcogenides (TMDs) can result in new two-dimensional (2D) materials ranging from semiconductors to metals and superconductors with tunable optical and electrical properties. Semiconducting WTe <subscript>2</subscript> <subscript>x</subscript> S <subscript>2(1-</subscript> <subscript>x</subscript> <subscript>)</subscript> monolayer possesses two inequivalent valleys in the Brillouin zone, each valley coupling selectively with circularly polarized light (CPL). The degree of valley polarization (DVP) under the excitation of CPL represents the purity of valley polarized photoluminescence (PL), a critical parameter for opto-valleytronic applications. Here, new strategies to efficiently tailor the valley-polarized PL from semiconducting monolayer WTe <subscript>2</subscript> <subscript>x</subscript> S <subscript>2(1-</subscript> <subscript>x</subscript> <subscript>)</subscript> at room temperature (RT) through alloying and back-gating are presented. The DVP at RT is found to increase drastically from < 5% in WS <subscript>2</subscript> to 40% in WTe <subscript>0.12</subscript> S <subscript>1.88</subscript> by Te-alloying to enhance the spin-orbit coupling. Further enhancement and control of the DVP from 40% up to 75% is demonstrated by electrostatically doping the monolayer WTe <subscript>0.12</subscript> S <subscript>1.88</subscript> via metallic 1T'-WTe <subscript>2</subscript> electrodes, where the use of 1T'-WTe <subscript>2</subscript> substantially lowers the Schottky barrier height (SBH) and weakens the Fermi-level pinning of the electrical contacts. The demonstration of drastically enhanced DVP and electrical tunability in the valley-polarized emission from 1T'-WTe <subscript>2</subscript> /WTe <subscript>0.12</subscript> S <subscript>1.88</subscript> heterostructures paves new pathways towards harnessing valley excitons in ultrathin valleytronic devices for RT applications.<br /> (© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.)

Details

Language :
English
ISSN :
2198-3844
Volume :
11
Issue :
2
Database :
MEDLINE
Journal :
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Publication Type :
Academic Journal
Accession number :
37974381
Full Text :
https://doi.org/10.1002/advs.202304890