Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP 2 S 6 and InZnO.

MLA

Ryu, Hojoon, et al. “Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP 2 S 6 and InZnO.” ACS Applied Materials & Interfaces, vol. 15, no. 46, Nov. 2023, pp. 53671–77. EBSCOhost, https://doi.org/10.1021/acsami.3c10582.

APA

Ryu, H., Kang, J., Park, M., Bae, B., Zhao, Z., Rakheja, S., Lee, K., & Zhu, W. (2023). Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP 2 S 6 and InZnO. ACS Applied Materials & Interfaces, 15(46), 53671–53677. https://doi.org/10.1021/acsami.3c10582

Chicago

Ryu, Hojoon, Junzhe Kang, Minseong Park, Byungjoon Bae, Zijing Zhao, Shaloo Rakheja, Kyusang Lee, and Wenjuan Zhu. 2023. “Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP 2 S 6 and InZnO.” ACS Applied Materials & Interfaces 15 (46): 53671–77. doi:10.1021/acsami.3c10582.