Large Perpendicular Magnetic Anisotropy Induced by an Intersite Charge Transfer in Strained EuVO 2 H Films.

Perovskite oxides AB O ₃ continue to be a major focus in materials science. Of particular interest is the interplay between A and B cations as exemplified by intersite charge transfer (ICT), which causes novel phenomena including negative thermal expansion and metal-insulator transition. However, the ICT properties were achieved and optimized by cationic substitution or ordering. Here we demonstrate an anionic approach to induce ICT using an oxyhydride perovskite, EuVO ₂ H, which has alternating layers of EuH and VO ₂ . A bulk EuVO ₂ H behaves as a ferromagnetic insulator with a relatively high transition temperature ( T _C ) of 10 K. However, the application of external pressure to the Eu ^II V ^III O ₂ H bulk or compressive strain from the substrate in the thin films induces ICT from the Eu ^II H layer to the V ^III O ₂ layer due to the extended empty V d _xy orbital. The ICT phenomenon causes the VO ₂ layer to become conductive, leading to an increase in T _C that is dependent on the number of carriers in the d _xy orbitals (up to a factor of 4 for 10 nm thin films). In addition, a large perpendicular magnetic anisotropy appears with the ICT for the films of <100 nm, which is unprecedented in materials with orbital-free Eu ²⁺ , opening new perspectives for applications. The present results provide opportunities for the acquisition of novel functions by alternating transition metal/rare earth layers with heteroanions.