Cite
Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits.
MLA
Varley, Joel B., et al. “Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits.” ACS Applied Materials & Interfaces, vol. 15, no. 36, Sept. 2023, pp. 43111–23. EBSCOhost, https://doi.org/10.1021/acsami.3c06725.
APA
Varley, J. B., Ray, K. G., & Lordi, V. (2023). Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits. ACS Applied Materials & Interfaces, 15(36), 43111–43123. https://doi.org/10.1021/acsami.3c06725
Chicago
Varley, Joel B, Keith G Ray, and Vincenzo Lordi. 2023. “Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits.” ACS Applied Materials & Interfaces 15 (36): 43111–23. doi:10.1021/acsami.3c06725.