Back to Search
Start Over
Solvothermal synthesis of TiO 2 nanospheres for non-volatile memory and synaptic learning applications.
- Source :
-
Nanotechnology [Nanotechnology] 2023 Aug 02; Vol. 34 (42). Date of Electronic Publication: 2023 Aug 02. - Publication Year :
- 2023
-
Abstract
- In this study, we used the one-pot solvothermal method to synthesize the TiO <subscript>2</subscript> nanospheres (NSs) and used them for non-volatile memory and neuromorphic computing applications. Several analytical tools were used to understand the structural, optical, morphological, and compositional characteristics of synthesized TiO <subscript>2</subscript> NSs. The tetragonal crystal structure of anatase TiO <subscript>2</subscript> was formed, according to the Rietveld refined x-ray diffraction results. The NS morphology was confirmed by field emission scanning electron microscopy and transmission electron microscopy images. X-ray photoelectron spectroscopy was probed to understand the elemental composition and electronic states of the TiO <subscript>2</subscript> NSs. We specifically looked at the impact of reaction time on the structural, optical, morphological, compositional, and resistive switching (RS) properties of TiO <subscript>2</subscript> NSs. The fabricated devices (Ag/TiO <subscript>2</subscript> NSs/FTO) exhibit bipolar RS behavior. The optimized RS device shows good endurance (5000 cycles) and memory retention (5000 s) properties. Moreover, fabricated devices showed double-valued charge-flux characteristics, whereas charge transport was caused by the Ohmic and space charge-limited current mechanisms. Additionally, the optimized device can mimic various synaptic characteristics including potentiation-depression, excitatory post-synaptic current, and paired-pulse facilitation.<br /> (© 2023 IOP Publishing Ltd.)
Details
- Language :
- English
- ISSN :
- 1361-6528
- Volume :
- 34
- Issue :
- 42
- Database :
- MEDLINE
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 37463566
- Full Text :
- https://doi.org/10.1088/1361-6528/ace830