Cite
Achieving high carrier separation over Bi 4 O 5 I 2 through Ni doping for improved photocatalytic CO 2 reduction.
MLA
Chen, Zhuohua, et al. “Achieving High Carrier Separation over Bi 4 O 5 I 2 through Ni Doping for Improved Photocatalytic CO 2 Reduction.” Nanotechnology, vol. 34, no. 40, July 2023. EBSCOhost, https://doi.org/10.1088/1361-6528/ace44c.
APA
Chen, Z., Jin, X., Lan, Q., Li, X., Huang, Q., Liu, W., Guo, Y., Xie, H., & Ye, L. (2023). Achieving high carrier separation over Bi 4 O 5 I 2 through Ni doping for improved photocatalytic CO 2 reduction. Nanotechnology, 34(40). https://doi.org/10.1088/1361-6528/ace44c
Chicago
Chen, Zhuohua, Xiaoli Jin, Qing Lan, Xin Li, Qunzeng Huang, Wenmin Liu, Yuwei Guo, Haiquan Xie, and Liqun Ye. 2023. “Achieving High Carrier Separation over Bi 4 O 5 I 2 through Ni Doping for Improved Photocatalytic CO 2 Reduction.” Nanotechnology 34 (40). doi:10.1088/1361-6528/ace44c.