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Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric.

Authors :
Barreto ARJ
Candiotto G
Avila HJC
Carvalho RS
Dos Santos AM
Prosa M
Benvenuti E
Moschetto S
Toffanin S
Capaz RB
Muccini M
Cremona M
Source :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Jul 19; Vol. 15 (28), pp. 33809-33818. Date of Electronic Publication: 2023 Jul 05.
Publication Year :
2023

Abstract

Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light-emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLET implementation. This work reports on the improvements obtained by using polyurethane films as a dielectric layer material in place of the standard poly(methyl methacrylate) (PMMA) in OLET devices. It was found that polyurethane drastically reduces the number of traps in the device, thereby improving electrical and optoelectronic device parameters. In addition, a model was developed to rationalize an anomalous behavior at the pinch-off voltage. Our findings represent a step forward to overcome the limiting factors of OLETs that prevent their use in commercial electronics by providing a simple route for low-bias device operation.

Details

Language :
English
ISSN :
1944-8252
Volume :
15
Issue :
28
Database :
MEDLINE
Journal :
ACS applied materials & interfaces
Publication Type :
Academic Journal
Accession number :
37403922
Full Text :
https://doi.org/10.1021/acsami.3c04509