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Coexisting Ferroelectric and Ferrovalley Polarizations in Bilayer Stacked Magnetic Semiconductors.
- Source :
-
Nano letters [Nano Lett] 2023 Jul 12; Vol. 23 (13), pp. 6226-6232. Date of Electronic Publication: 2023 Jun 26. - Publication Year :
- 2023
-
Abstract
- It has long been expected that the coexistence of ferroelectric and ferrovalley polarizations in one magnetic semiconductor could offer the possibility to revolutionize electronic devices. In this study, monolayer and bilayer YI <subscript>2</subscript> are studied. Monolayer YI <subscript>2</subscript> is a ferromagnetic semiconductor and exhibits a valley polarization up to 105 meV. All of the present bilayer YI <subscript>2</subscript> regardless of stacking orders show antiferromagnetic states. Interestingly, the bilayer YI <subscript>2</subscript> with 3R-type stackings shows not only valley polarization but also unexpected ferroelectric polarization, proving the concurrent ferrovalley and multiferroics behaviors. Moreover, the valley polarization of 3R-type bilayer YI <subscript>2</subscript> can be reversed by controlling the direction of ferroelectric polarization through an electric field or manipulating the magnetization direction using an external magnetic field. The amazing phenomenon is also demonstrated in 2D van der Waals LaI <subscript>2</subscript> and GdBr <subscript>2</subscript> bilayers. A design idea of multifunctional devices is proposed based on the concurrent ferrovalley and multiferroics characteristics.
Details
- Language :
- English
- ISSN :
- 1530-6992
- Volume :
- 23
- Issue :
- 13
- Database :
- MEDLINE
- Journal :
- Nano letters
- Publication Type :
- Academic Journal
- Accession number :
- 37363831
- Full Text :
- https://doi.org/10.1021/acs.nanolett.3c01948