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Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3 .
- Source :
-
Nanoscale [Nanoscale] 2023 Jun 15; Vol. 15 (23), pp. 9964-9972. Date of Electronic Publication: 2023 Jun 15. - Publication Year :
- 2023
-
Abstract
- Wide bandgap semiconductors such as gallium oxide (Ga <subscript>2</subscript> O <subscript>3</subscript> ) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal Ga <subscript>2</subscript> O <subscript>3</subscript> substrates can be routinely grown from melt along various orientations, the influence of such orientations has been seldom reported. Further, making rectifying p-n diodes from Ga <subscript>2</subscript> O <subscript>3</subscript> has been difficult due to lack of p-type doping. In this study, we fabricated and optimized 2D/3D vertical diodes on β-Ga <subscript>2</subscript> O <subscript>3</subscript> by varying the following three factors: substrate planar orientation, choice of 2D material and metal contacts. The quality of our devices was validated using high-temperature dependent measurements, atomic-force microscopy (AFM) techniques and technology computer-aided design (TCAD) simulations. Our findings suggest that 2D/3D β-Ga <subscript>2</subscript> O <subscript>3</subscript> vertical heterojunctions are optimized by substrate planar orientation (-201), combined with 2D WS <subscript>2</subscript> exfoliated layers and Ti contacts, and show record rectification ratios (>10 <superscript>6</superscript> ) concurrently with ON-Current density (>10 <superscript>3</superscript> A cm <superscript>-2</superscript> ) for application in power rectifiers.
- Subjects :
- Microscopy, Atomic Force
Electronics
Semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 2040-3372
- Volume :
- 15
- Issue :
- 23
- Database :
- MEDLINE
- Journal :
- Nanoscale
- Publication Type :
- Academic Journal
- Accession number :
- 37266913
- Full Text :
- https://doi.org/10.1039/d3nr01987j