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Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe 4 GeTe 2 far above room temperature.

Authors :
Wang H
Lu H
Guo Z
Li A
Wu P
Li J
Xie W
Sun Z
Li P
Damas H
Friedel AM
Migot S
Ghanbaja J
Moreau L
Fagot-Revurat Y
Petit-Watelot S
Hauet T
Robertson J
Mangin S
Zhao W
Nie T
Source :
Nature communications [Nat Commun] 2023 Apr 29; Vol. 14 (1), pp. 2483. Date of Electronic Publication: 2023 Apr 29.
Publication Year :
2023

Abstract

Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (T <subscript>c</subscript> ) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe <subscript>4</subscript> GeTe <subscript>2</subscript> with the T <subscript>c</subscript> reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced T <subscript>c</subscript> , which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe <subscript>4</subscript> GeTe <subscript>2</subscript> in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.<br /> (© 2023. The Author(s).)

Details

Language :
English
ISSN :
2041-1723
Volume :
14
Issue :
1
Database :
MEDLINE
Journal :
Nature communications
Publication Type :
Academic Journal
Accession number :
37120587
Full Text :
https://doi.org/10.1038/s41467-023-37917-8