Control of the resistive switching voltage and reduction of the high-resistive-state current of zinc oxide by self-assembled monolayers.

We investigated the effect of self-assembled monolayer (SAM) modification of ZnO on the resistive switching behaviour by fabricating electrode-sandwiched devices (ITO/ZnO-SAM/Al). The resistive switching voltages of SAM-modified ZnO films were shifted from that of bare ZnO depending on the surface dipole induced by the SAMs. In particular, methylaminopropyl-substituted SAM-modified ZnO showed lower switching voltage (1.6 V) than bare ZnO (2.9 V). Moreover, the on/off ratio was also improved by SAM modification (from 10 ² to 10 ⁴ ).