Back to Search Start Over

A comprehensive correlated analysis of Ra-Doped (ZnO 2 , ZnO) for optoelectronic applications: a first-principle study.

Authors :
Moin M
Anwar AW
Ali A
Nabi S
Bashir MZ
Ali S
Bilal S
Haq NU
Source :
Journal of molecular modeling [J Mol Model] 2023 Jan 19; Vol. 29 (2), pp. 44. Date of Electronic Publication: 2023 Jan 19.
Publication Year :
2023

Abstract

Context: Zinc oxide (ZnO) exhibits bulk-like behavior and is modified by radium doping to attain favorable electronic properties. The elastic and mechanical response of ZnO <subscript>2</subscript> is much more favorable than ZnO material. The change in thermal expansion, Debye temperature, free energy, entropy, and specific heat leads it to be a good candidate for thermodynamic applications at low and high temperatures. Optical properties like dielectric function, absorption, refraction, reflection, and refractive index obtained after suitable doping transform the material as optically active. ZnO <subscript>2</subscript> has low reflectivity and zero absorption below the electronic band gap as compared to ZnO in a wider spectral range. Our analyses on doped ZnO <subscript>2</subscript> and ZnO make us confident for a wide range of applications in optoelectronic and anti-bacterial treatment in biomedical devices. Especially due to high flexibility and high light transmission, ZnO <subscript>2</subscript> is an excellent applicant for transparent electrodes.<br />Methods: Density functional theory has been employed in consistency with generalized gradient approximation (GGA) with PBEsol to analyze the structural, electronic, elastic, mechanical, thermodynamic, and optical response of pure and Ra-doped (ZnO <subscript>2</subscript> and ZnO) materials.<br /> (© 2023. The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.)

Details

Language :
English
ISSN :
0948-5023
Volume :
29
Issue :
2
Database :
MEDLINE
Journal :
Journal of molecular modeling
Publication Type :
Academic Journal
Accession number :
36653515
Full Text :
https://doi.org/10.1007/s00894-022-05425-z