Back to Search
Start Over
Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO 3 /Al/SrZrTiO 3 /ITO with Embedded Al Layer.
- Source :
-
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 Dec 10; Vol. 12 (24). Date of Electronic Publication: 2022 Dec 10. - Publication Year :
- 2022
-
Abstract
- The SrZrTiO <subscript>3</subscript> (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 10 <superscript>7</superscript> , lower operation voltage (V <subscript>SET</subscript> = -0.8 V and V <subscript>RESET</subscript> = 2.05 V), uniform film, and device stability of more than 10 <superscript>5</superscript> s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.
Details
- Language :
- English
- ISSN :
- 2079-4991
- Volume :
- 12
- Issue :
- 24
- Database :
- MEDLINE
- Journal :
- Nanomaterials (Basel, Switzerland)
- Publication Type :
- Academic Journal
- Accession number :
- 36558265
- Full Text :
- https://doi.org/10.3390/nano12244412