Cite
Mixed-Substituted Single-Source Precursors for Si 1- x Ge x Thin Film Deposition.
MLA
Köstler, Benedikt, et al. “Mixed-Substituted Single-Source Precursors for Si 1- x Ge x Thin Film Deposition.” Inorganic Chemistry, vol. 61, no. 43, Oct. 2022, pp. 17248–55. EBSCOhost, https://doi.org/10.1021/acs.inorgchem.2c02835.
APA
Köstler, B., Jungwirth, F., Achenbach, L., Sistani, M., Bolte, M., Lerner, H.-W., Albert, P., Wagner, M., & Barth, S. (2022). Mixed-Substituted Single-Source Precursors for Si 1- x Ge x Thin Film Deposition. Inorganic Chemistry, 61(43), 17248–17255. https://doi.org/10.1021/acs.inorgchem.2c02835
Chicago
Köstler, Benedikt, Felix Jungwirth, Luisa Achenbach, Masiar Sistani, Michael Bolte, Hans-Wolfram Lerner, Philipp Albert, Matthias Wagner, and Sven Barth. 2022. “Mixed-Substituted Single-Source Precursors for Si 1- x Ge x Thin Film Deposition.” Inorganic Chemistry 61 (43): 17248–55. doi:10.1021/acs.inorgchem.2c02835.